Reduced Electron Relaxation Rate in Multielectron Quantum Dots
نویسندگان
چکیده
منابع مشابه
Electron Spin-Phonon Relaxation in Quantum Dots
We calculate the spin relaxation rates in parabolic quantum dots due to the phonon modulation of the spin-orbit interaction in presence of an external magnetic field. Both, deformation potential (DP) and piezoelectric (PE) electron-phonon couplings are included in the Pavlov-Firsov spin-phonon Hamiltonian. We demonstrate that the spin relaxation rates are particularly sensitive with the Landé g...
متن کاملElectron spin relaxation by nuclei in semiconductor quantum dots
We have studied theoretically the electron spin relaxation in semiconductor quantum dots via interaction with nuclear spins. The relaxation is shown to be determined by three processes: (i) – the precession of the electron spin in the hyperfine field of the frozen fluctuation of the nuclear spins; (ii) – the precession of the nuclear spins in the hyperfine field of the electron; and (iii) – the...
متن کاملSinglet-Triplet Relaxation in Two-electron Silicon Quantum Dots
We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation in this regime occurs mainly via virtual states and is due to nuclear hyperfine coupling. In the presence of an external magnetic field perpendicular to the...
متن کاملSpin relaxation in quantum dots
Results are given for spin relaxation in quantum dots due to acoustic phonon-assisted flips of single spins at low temperatures. The dominant spin relaxation processes for varying dot size, temperature, and magnetic field are identified. These processes are mediated by the spin-orbit interaction and are described within a generalized effective mass treatment. Particular attention is given to ph...
متن کاملFew-electron quantum dots
We review some electron transport experiments on few-electron, vertical quantum dot devices. The measurement of current versus source–drain voltage and gate voltage is used as a spectroscopic tool to investigate the energy characteristics of interacting electrons confined to a small region in a semiconducting material. Three energy scales are distinguished: the single-particle states, which are...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2005
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.95.066806